mbr20h150ct, mbrf20h150ct, SB20H150CT-1 www.vishay.com vishay general semiconductor revision: 13-aug-13 1 document number: 88864 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common cathode high voltage schottky rectifier low leakage current 5.0 a features ? power pack ? guardring for overvoltage protection ? low power loss, high efficiency ? low forward voltage drop ? high frequency operation ? solder dip 275 c max. , 10 s per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency inverters, freewheeling, and polarity protection application. mechanical data case: to-220ab, ito-220ab, and to-262aa ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? ? primary characteristics i f(av) 2 x 10 a v rrm 150 v i fsm 200 a v f 0.75 v t j max. 175 c package to-220ab, ito-220ab, to-262aa diode variations dual common cathode ito-220ab to-262aa mbr20h150ct mbrf20h150ct SB20H150CT-1 case pin 2 pin 1 pin 3 to-220ab 1 2 3 1 2 3 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr20h150ct mbrf20h150ct SB20H150CT-1 unit maximum repetitive pe ak reverse voltage v rrm 150 v working peak reverse voltage v rwm 150 v maximum dc blocking voltage v dc 150 v maximum average forward rectified current per device i f(av) 20 a per diode 10 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 200 a peak repetitive reverse current per diode ? at t p = 2 s, 1 khz i rrm 1.0 a peak non-repetitive reverse surge energy per diode ? (8/20 s waveform) e rsm 10 mj non-repetitive avalanche energy per diode at 25 c, ? i as = 1.5 a, l = 10 mh e as 11.25 mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c isolation voltage (ito-220ab only) from te rminals to heatsink t = 1 min v ac 1500 v
mbr20h150ct, mbrf20h150ct, SB20H150CT-1 www.vishay.com vishay general semiconductor revision: 13-aug-13 2 document number: 88864 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) aec-q101 qualified ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward derating curve (total) fig. 2 - maximum non-repetitive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage per diode i f = 10 a t c = 25 c v f (1) 0.90 v i f = 10 a t c = 125 c 0.75 i f = 20 a t c = 25 c 0.99 i f = 20 a t c = 125 c 0.86 maximum reverse current per diode ? at working peak reverse voltage t j = 25 c i r (1) 5.0 a t j = 125 c 1.0 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit typical thermal resistance per diode r ? jc 2.2 4.2 2.2 c/w ordering information (example) package preferred p/n unit weight (g) package code ba se quantity delivery mode to-220ab mbr20h150ct-e3/45 2.06 45 50/tube tube ito-220ab mbrf20h150ct-e3/45 2.20 45 50/tube tube to-262aa SB20H150CT-1e3/45 1.58 45 50/tube tube 0 5 10 15 20 25 30 25 50 75 100 125 150 175 mbrf mbr, mbrb average forward cu rrent (a) case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 240 260 10 1 100 t j = t j max. 8.3 ms single half sine-wave n umber of cycles at 60 hz peak forward surge current (a)
mbr20h150ct, mbrf20h150ct, SB20H150CT-1 www.vishay.com vishay general semiconductor revision: 13-aug-13 3 document number: 88864 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode 0.1 0.3 0.2 0.4 0.6 0.8 1.0 0.5 0.7 0.9 1.1 1.2 100 10 0.1 1 instantaneous forward voltage (v) instantaneous forward current (a) t j = 125 c t j = 175 c t j = 25 c t j = 75 c 0.1 0.01 1 10 100 1000 10 000 10 20 30 50 70 100 40 60 80 90 percent of rated peak reverse voltage (%) instantaneous reverse current (a) t j = 125 c t j = 175 c t j = 25 c t j = 75 c 10 1 100 100 1000 10 000 0.1 10 reverse voltage (v) junction capacitance (pf) 0.01 1 100 10 10 100 0.1 0.1 1 mbrf mbr, mbrb t - pulse duration (s) transient thermal impedance (c/w)
mbr20h150ct, mbrf20h150ct, SB20H150CT-1 www.vishay.com vishay general semiconductor revision: 13-aug-13 4 document number: 88864 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-220ab 0.398 (10.10) 0.382 (9.70) 0.055 (1.40) 0.047 (1.20) 0.343 (8.70) typ. 0.067 (1.70) typ. 0.331(8.40) typ. 0.150 (3.80) 0.139 (3.54) dia. 0.114 (2.90) 0.106 (2.70) 0.634 (16.10) 0.618 (15.70) pin 2 3 1 0.118 (3.00) typ. 0.035 (0.90) 0.028 (0.70) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) typ. 0.100 (2.54) typ. 0.638 (16.20) 0.598 (15.20) 0.055 (1.40) 0.049 (1.25) 0.185 (4.70) 0.169 (4.30) 0.154 (3.90) 0.138 (3.50) 0.370 (9.40) 0.354 (9.00) 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 1.161 (29.48) 1.106 (28.08) 0.024 (0.60) 0.018 (0.45) 0.024 (0.60) 0.018 (0.45) 0.138 (3.50) 0.122 (3.10) 1.29 (3.28) 1.21 (3.08) 0.100 (2.54) typ. 0.200 (5.08) typ. 0.058 (1.47) max. 0.024 (0.60) 0.039 (1.00) 0.108 (2.74) 0.092 (2.34) 0.117 (2.96) 0.101 (2.56) 0.633 (16.07) 0.601 (15.67) 0.630 (16.00) 0.614 (15.60) dia. 0.320 (8.12) 0.304 (7.72) 0.396 (10.05) 0.372 (9.45) pin 0.408 (10.36) 0.392 (9.96) ito-220ab 0.270 (6.88) 0.255 (6.48) 0.264 (6.70) 0.248 (6.50) 0.193 (4.90) 0.177 (4.50) 12 3
mbr20h150ct, mbrf20h150ct, SB20H150CT-1 www.vishay.com vishay general semiconductor revision: 13-aug-13 5 document number: 88864 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 0.370 (9.40) 0.354 (9.00) 0.523 (13.28) 0.507 (12.88) 0.425 (10.80) 0.393 (10.00) 0.102 (2.60) 0.087 (2.20) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.024 (0.60) 0.018 (0.45) 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.055 (1.40) 0.039 (1.00) 0.488 (12.4) 0.472 (12.00) k 0.100 (2.54) typ. 0.200 (5.08) typ. 0.028 (0.70) 0.035 (0.90) 0.398 (10.10) 0.382 (9.70) to-262aa pin 12 3
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